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BFP540FE6327XT Технические параметры

Infineon  BFP540FE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Infineon
Material Si
EU RoHS Compliant
ECCN (US) EAR99
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 14
Maximum Collector-Emitter Voltage (V) 4.5
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 1
Maximum DC Collector Current (A) 0.08
Свойство продукта Значение свойства
Maximum DC Collector Current Range (A) 0.06 to 0.12
Minimum DC Current Gain 50@[email protected]
Minimum DC Current Gain Range 50 to 120
Maximum Power Dissipation (mW) 250
Maximum Transition Frequency (MHz) 30000(Typ)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Configuration Single Dual Emitter
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BFP540FE6327XT Документы

  • Datasheets
BFP540FE6327XT brand manufacturers: Infineon, Anli stock, BFP540FE6327XT reference price.Infineon. BFP540FE6327XT parameters, BFP540FE6327XT Datasheet PDF and pin diagram description download.You can use the BFP540FE6327XT Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP540FE6327XT pin diagram and circuit diagram and usage method of function,BFP540FE6327XT electronics tutorials.You can download from the Anli.