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Infineon BFP640FESDE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - RF | |
Марка | Infineon | |
EU RoHS | Compliant | |
ECCN (US) | EAR99 | |
Automotive | Yes | |
PPAP | Unknown | |
Number of Elements per Chip | 1 | |
Maximum Collector Base Voltage (V) | 4.8 | |
Maximum Collector-Emitter Voltage (V) | 4.1 | |
Maximum Collector-Emitter Voltage Range (V) | &l;20 | |
Maximum DC Collector Current (A) | 0.05 | |
Maximum DC Collector Current Range (A) | 0.001 to 0.06 | |
Minimum DC Current Gain | 110@30mA@3V | |
Minimum DC Current Gain Range | 50 to 120 | |
Maximum Power Dissipation (mW) | 200 |
Свойство продукта | Значение свойства | |
---|---|---|
Maximum Transition Frequency (MHz) | 46000(Typ) | |
Minimum Operating Temperature (°C) | -55 | |
Maximum Operating Temperature (°C) | 150 | |
Mounting | Surface Mount | |
Package Height | 0.55 | |
Package Width | 0.8 | |
Package Length | 1.4 | |
PCB changed | 4 | |
Standard Package Name | TSFP | |
Supplier Package | TSFP | |
Packaging | Tape and Reel | |
Part Status | Obsolete | |
Type | NPN | |
Pin Count | 4 | |
Configuration | Single Dual Emitter |