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BFP740E6327XT Технические параметры

Infineon  BFP740E6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Infineon
Material SiGe
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 13
Maximum Collector-Emitter Voltage (V) 4
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 1.2
Maximum DC Collector Current (A) 0.045
Maximum DC Collector Current Range (A) 0.001 to 0.06
Minimum DC Current Gain 160@25mA@3V
Minimum DC Current Gain Range 120 to 200
Maximum Power Dissipation (mW) 160
Свойство продукта Значение свойства
Maximum Transition Frequency (MHz) 44000(Typ)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.9(Max)
Package Width 1.25
Package Length 2
PCB changed 3
Tab Tab
Standard Package Name SOT
Supplier Package SOT-343
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 4
Configuration Single Dual Emitter
BFP740E6327XT brand manufacturers: Infineon, Anli stock, BFP740E6327XT reference price.Infineon. BFP740E6327XT parameters, BFP740E6327XT Datasheet PDF and pin diagram description download.You can use the BFP740E6327XT Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP740E6327XT pin diagram and circuit diagram and usage method of function,BFP740E6327XT electronics tutorials.You can download from the Anli.