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BFP740FESDE6327XT Технические параметры

Infineon  BFP740FESDE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Infineon
Material SiGe
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 4.9
Maximum Collector-Emitter Voltage (V) 4.2
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum DC Collector Current (A) 0.045
Maximum DC Collector Current Range (A) 0.001 to 0.06
Maximum Emitter Cut-Off Current (nA) 10000
Maximum Collector Cut-Off Current (nA) 400
Operational Bias Conditions 3V/25mA
Minimum DC Current Gain 160@25mA@3V
Minimum DC Current Gain Range 120 to 200
Typical Input Capacitance (pF) 0.5
Typical Output Capacitance (pF) 0.08
Свойство продукта Значение свойства
Maximum Power Dissipation (mW) 160
Maximum Power 1dB Compression (dBm) 10(Typ)
Typical Power Gain (dB) 39
Maximum 3rd Order Intercept Point (dBm) 24.5(Typ)
Maximum Transition Frequency (MHz) 47000(Typ)
Maximum Noise Figure (dB) 1.45(Min)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.55
Package Width 0.8
Package Length 1.4
PCB changed 4
Standard Package Name TSFP
Supplier Package TSFP
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 4
Configuration Single Dual Emitter
Просмотр сходства
BFP740FESDE6327XT brand manufacturers: Infineon, Anli stock, BFP740FESDE6327XT reference price.Infineon. BFP740FESDE6327XT parameters, BFP740FESDE6327XT Datasheet PDF and pin diagram description download.You can use the BFP740FESDE6327XT Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP740FESDE6327XT pin diagram and circuit diagram and usage method of function,BFP740FESDE6327XT electronics tutorials.You can download from the Anli.