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BFR181WE6327XT Технические параметры

Infineon  BFR181WE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Infineon
Material Si
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 20
Maximum Collector-Emitter Voltage (V) 12
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 2
Maximum DC Collector Current (A) 0.02
Maximum DC Collector Current Range (A) 0.001 to 0.06
Minimum DC Current Gain 70@5mA@8V
Minimum DC Current Gain Range 50 to 120
Maximum Power Dissipation (mW) 175
Свойство продукта Значение свойства
Maximum Transition Frequency (MHz) 8000(Typ)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.9(Max)
Package Width 1.25
Package Length 2
PCB changed 3
Standard Package Name SOT
Supplier Package SOT-323
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 3
Configuration Single

BFR181WE6327XT Документы

  • Datasheets
BFR181WE6327XT brand manufacturers: Infineon, Anli stock, BFR181WE6327XT reference price.Infineon. BFR181WE6327XT parameters, BFR181WE6327XT Datasheet PDF and pin diagram description download.You can use the BFR181WE6327XT Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR181WE6327XT pin diagram and circuit diagram and usage method of function,BFR181WE6327XT electronics tutorials.You can download from the Anli.