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BFR182B6663XT Технические параметры

Infineon  BFR182B6663XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Infineon
Material Si
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 20
Maximum Collector-Emitter Voltage (V) 12
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 2
Maximum DC Collector Current (A) 0.035
Maximum DC Collector Current Range (A) 0.001 to 0.06
Minimum DC Current Gain 70@10mA@8V
Minimum DC Current Gain Range 50 to 120
Maximum Power Dissipation (mW) 250
Свойство продукта Значение свойства
Maximum Transition Frequency (MHz) 8000(Typ)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
Mounting Surface Mount
Package Height 1(Max)
Package Width 1.3
Package Length 2.9
PCB changed 3
Standard Package Name SOT
Supplier Package SOT-23
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 3
Configuration Single

BFR182B6663XT Документы

  • Datasheets
BFR182B6663XT brand manufacturers: Infineon, Anli stock, BFR182B6663XT reference price.Infineon. BFR182B6663XT parameters, BFR182B6663XT Datasheet PDF and pin diagram description download.You can use the BFR182B6663XT Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR182B6663XT pin diagram and circuit diagram and usage method of function,BFR182B6663XT electronics tutorials.You can download from the Anli.