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BFR35APE6327BTSA1 Технические параметры
Infineon BFR35APE6327BTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Infineon | |
| Factory Lead Time | 4 Weeks | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Transistor Polarity | NPN | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Transition Frequency-Nom (fT) | 5000 MHz | |
| Manufacturer Part Number | BFR35APE6327BTSA1 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.73 | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Collector Current-Max (IC) | 0.045 A | |
| Continuous Collector Current | 45 | |
| Collector-Emitter Voltage-Max | 15 V | |
| Highest Frequency Band | L BAND | |
| Collector-Base Capacitance-Max | 0.55 pF |
BFR35APE6327BTSA1 Документы
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