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BFR360FE6327XT Технические параметры

Infineon  BFR360FE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Infineon
Mount Surface Mount
Number of Pins 3Pins
Material Si
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 15
Maximum Collector-Emitter Voltage (V) 6
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 2
Maximum DC Collector Current (A) 0.035
Maximum DC Collector Current Range (A) 0.001 to 0.06
Minimum DC Current Gain 90@15mA@3V
Minimum DC Current Gain Range 50 to 120
Maximum Power Dissipation (mW) 210
Maximum Transition Frequency (MHz) 14000(Typ)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
Свойство продукта Значение свойства
Mounting Surface Mount
Package Height 0.55
Package Width 0.8
Package Length 1.2
PCB changed 3
Standard Package Name TSFP
Supplier Package TSFP
Lead Shape Flat
Number of Elements 1 Element
RoHS Compliant
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Frequency 14 GHz
Pin Count 3
Polarity NPN
Configuration Single
Power Dissipation 210 mW
Collector Emitter Voltage (VCEO) 6 V
Collector Base Voltage (VCBO) 15 V
Emitter Base Voltage (VEBO) 2 V
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BFR360FE6327XT Документы

  • Datasheets
BFR360FE6327XT brand manufacturers: Infineon, Anli stock, BFR360FE6327XT reference price.Infineon. BFR360FE6327XT parameters, BFR360FE6327XT Datasheet PDF and pin diagram description download.You can use the BFR360FE6327XT Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR360FE6327XT pin diagram and circuit diagram and usage method of function,BFR360FE6327XT electronics tutorials.You can download from the Anli.