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BFR949L3E6327XT Технические параметры

Infineon  BFR949L3E6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Infineon
Number of Pins 3Pins
Material Si
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 20
Maximum Collector-Emitter Voltage (V) 10
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 1.5
Maximum DC Collector Current (A) 0.05
Maximum DC Collector Current Range (A) 0.001 to 0.06
Minimum DC Current Gain 100@5mA@6V
Minimum DC Current Gain Range 50 to 120
Maximum Power Dissipation (mW) 250
Свойство продукта Значение свойства
Maximum Transition Frequency (MHz) 9000(Typ)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.45(Max)
Package Width 0.6
Package Length 1
PCB changed 3
Standard Package Name TSLP
Supplier Package TSLP
Lead Shape No Lead
RoHS Compliant
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 3
Configuration Single

BFR949L3E6327XT Документы

  • Datasheets
BFR949L3E6327XT brand manufacturers: Infineon, Anli stock, BFR949L3E6327XT reference price.Infineon. BFR949L3E6327XT parameters, BFR949L3E6327XT Datasheet PDF and pin diagram description download.You can use the BFR949L3E6327XT Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR949L3E6327XT pin diagram and circuit diagram and usage method of function,BFR949L3E6327XT electronics tutorials.You can download from the Anli.