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BFS17SE6327XT Технические параметры

Infineon  BFS17SE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Infineon
Material Si
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
Number of Elements per Chip 2Elements per Chips
Maximum Collector Base Voltage (V) 25
Maximum Collector-Emitter Voltage (V) 15
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Collector-Emitter Saturation Voltage (V) 0.4@1mA@10mA
Maximum Emitter Base Voltage (V) 2.5
Maximum DC Collector Current (A) 0.025
Maximum DC Collector Current Range (A) 0.001 to 0.06
Maximum Emitter Cut-Off Current (nA) 100
Maximum Collector Cut-Off Current (nA) 10000
Operational Bias Conditions 5V/20mA
Minimum DC Current Gain 40@2mA@1V|20@25mA@1V
Minimum DC Current Gain Range 2 to 30|30 to 50
Typical Input Capacitance (pF) 0.9
Typical Output Capacitance (pF) 0.55
Свойство продукта Значение свойства
Maximum Power Dissipation (mW) 280
Maximum Power 1dB Compression (dBm) 11(Typ)
Typical Power Gain (dB) 14
Maximum 3rd Order Intercept Point (dBm) 22.5(Typ)
Maximum Transition Frequency (MHz) 2500(Typ)
Maximum Noise Figure (dB) 5
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.9(Max)
Package Width 1.25
Package Length 2
PCB changed 6
Standard Package Name SOT
Supplier Package SOT-363
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 6
Configuration Dual
Просмотр сходства
BFS17SE6327XT brand manufacturers: Infineon, Anli stock, BFS17SE6327XT reference price.Infineon. BFS17SE6327XT parameters, BFS17SE6327XT Datasheet PDF and pin diagram description download.You can use the BFS17SE6327XT Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFS17SE6327XT pin diagram and circuit diagram and usage method of function,BFS17SE6327XT electronics tutorials.You can download from the Anli.