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Infineon BFS17SE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Infineon | |
| Material | Si | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Automotive | No | |
| PPAP | No | |
| Number of Elements per Chip | 2Elements per Chips | |
| Maximum Collector Base Voltage (V) | 25 | |
| Maximum Collector-Emitter Voltage (V) | 15 | |
| Maximum Collector-Emitter Voltage Range (V) | &l;20 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@1mA@10mA | |
| Maximum Emitter Base Voltage (V) | 2.5 | |
| Maximum DC Collector Current (A) | 0.025 | |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 | |
| Maximum Emitter Cut-Off Current (nA) | 100 | |
| Maximum Collector Cut-Off Current (nA) | 10000 | |
| Operational Bias Conditions | 5V/20mA | |
| Minimum DC Current Gain | 40@2mA@1V|20@25mA@1V | |
| Minimum DC Current Gain Range | 2 to 30|30 to 50 | |
| Typical Input Capacitance (pF) | 0.9 | |
| Typical Output Capacitance (pF) | 0.55 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum Power Dissipation (mW) | 280 | |
| Maximum Power 1dB Compression (dBm) | 11(Typ) | |
| Typical Power Gain (dB) | 14 | |
| Maximum 3rd Order Intercept Point (dBm) | 22.5(Typ) | |
| Maximum Transition Frequency (MHz) | 2500(Typ) | |
| Maximum Noise Figure (dB) | 5 | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 150 | |
| Mounting | Surface Mount | |
| Package Height | 0.9(Max) | |
| Package Width | 1.25 | |
| Package Length | 2 | |
| PCB changed | 6 | |
| Standard Package Name | SOT | |
| Supplier Package | SOT-363 | |
| Lead Shape | Gull-wing | |
| Packaging | Tape and Reel | |
| Part Status | Obsolete | |
| Type | NPN | |
| Pin Count | 6 | |
| Configuration | Dual |