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Infineon BFS481E6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Infineon | |
| Mount | Surface Mount | |
| Number of Pins | 6Pins | |
| Material | Si | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Automotive | Yes | |
| PPAP | Unknown | |
| Number of Elements per Chip | 2Elements per Chips | |
| Maximum Collector Base Voltage (V) | 20 | |
| Maximum Collector-Emitter Voltage (V) | 12 | |
| Maximum Collector-Emitter Voltage Range (V) | &l;20 | |
| Maximum Emitter Base Voltage (V) | 2 | |
| Maximum DC Collector Current (A) | 0.02 | |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 | |
| Maximum Emitter Cut-Off Current (nA) | 1000 | |
| Maximum Collector Cut-Off Current (nA) | 100 | |
| Operational Bias Conditions | 8V/5mA | |
| Minimum DC Current Gain | 70@5mA@8V | |
| Minimum DC Current Gain Range | 50 to 120 | |
| Typical Input Capacitance (pF) | 0.4 | |
| Typical Output Capacitance (pF) | 0.23 | |
| Maximum Power Dissipation (mW) | 175 | |
| Typical Power Gain (dB) | 20 | |
| Maximum Transition Frequency (MHz) | 8000(Typ) | |
| Maximum Noise Figure (dB) | 1.2(Typ) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Supplier Temperature Grade | Automotive | |
| Mounting | Surface Mount | |
| Package Height | 0.9(Max) | |
| Package Width | 1.25 | |
| Package Length | 2 | |
| PCB changed | 6 | |
| Standard Package Name | SOT | |
| Supplier Package | SOT-363 | |
| Lead Shape | Gull-wing | |
| Number of Elements | 2 Elements | |
| RoHS | Compliant | |
| Packaging | Tape and Reel | |
| Part Status | Obsolete | |
| Type | NPN | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -65 °C | |
| Frequency | 8 GHz | |
| Pin Count | 6 | |
| Polarity | NPN | |
| Configuration | Dual | |
| Power Dissipation | 175 mW | |
| Collector Emitter Voltage (VCEO) | 12 V | |
| Collector Base Voltage (VCBO) | 20 V | |
| Emitter Base Voltage (VEBO) | 2 V |