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BFT92E6327XT Технические параметры

Infineon  BFT92E6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Infineon
Material Si
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.21.00.95
Automotive No
PPAP No
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 20
Maximum Collector-Emitter Voltage (V) 15
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 2
Maximum DC Collector Current (A) 0.045
Maximum DC Collector Current Range (A) 0.001 to 0.06
Maximum Emitter Cut-Off Current (nA) 1000
Maximum Collector Cut-Off Current (nA) 100
Operational Bias Conditions 8V/15mA
Minimum DC Current Gain 20@15mA@8V
Minimum DC Current Gain Range 2 to 30
Typical Input Capacitance (pF) 0.7
Свойство продукта Значение свойства
Typical Output Capacitance (pF) 0.56
Maximum Power Dissipation (mW) 200
Typical Power Gain (dB) 13.5
Maximum Transition Frequency (MHz) 5000(Typ)
Maximum Noise Figure (dB) 3(Typ)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 1(Max)
Package Width 1.3
Package Length 2.9
PCB changed 3
Standard Package Name SOT
Supplier Package SOT-23
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type PNP
Pin Count 3
Configuration Single
Просмотр сходства
BFT92E6327XT brand manufacturers: Infineon, Anli stock, BFT92E6327XT reference price.Infineon. BFT92E6327XT parameters, BFT92E6327XT Datasheet PDF and pin diagram description download.You can use the BFT92E6327XT Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFT92E6327XT pin diagram and circuit diagram and usage method of function,BFT92E6327XT electronics tutorials.You can download from the Anli.