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BFY420(ES) Технические параметры
Infineon BFY420(ES) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Infineon | |
| Surface Mount | YES | |
| Material | Si | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| EU RoHS | Not Compliant | |
| ECCN (US) | EAR99 | |
| Automotive | Unknown | |
| PPAP | Unknown | |
| Number of Elements per Chip | 1 | |
| Maximum Collector Base Voltage (V) | 15 | |
| Maximum Collector-Emitter Voltage (V) | 4.5 | |
| Maximum Collector-Emitter Voltage Range (V) | &l;20 | |
| Maximum Emitter Base Voltage (V) | 1.5 | |
| Maximum DC Collector Current (A) | 0.035 | |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 | |
| Maximum Emitter Cut-Off Current (nA) | 20000 | |
| Maximum Collector Cut-Off Current (nA) | 30 | |
| Operational Bias Conditions | 2V/20mA | |
| Minimum DC Current Gain | 50@5mA@1V | |
| Minimum DC Current Gain Range | 50 to 120 | |
| Typical Input Capacitance (pF) | 0.67 | |
| Typical Output Capacitance (pF) | 0.14 | |
| Maximum Power Dissipation (mW) | 160 | |
| Maximum Power 1dB Compression (dBm) | 12(Typ) | |
| Typical Power Gain (dB) | 21 | |
| Maximum Transition Frequency (MHz) | 22000(Typ) | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 175 | |
| Mounting | Surface Mount | |
| Package Height | 0.95 | |
| Package Width | 1.78 | |
| Package Length | 1.78 | |
| PCB changed | 4 | |
| Standard Package Name | Micro-X |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Supplier Package | Micro-X | |
| Package Description | DISK BUTTON, O-CRDB-F4 | |
| Package Style | DISK BUTTON | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Operating Temperature-Max | 175 °C | |
| Transition Frequency-Nom (fT) | 22000 MHz | |
| Manufacturer Part Number | BFY420(ES) | |
| Package Shape | ROUND | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.11 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Type | NPN | |
| Terminal Finish | MATTE TIN | |
| Additional Feature | LOW NOISE | |
| Subcategory | Other Transistors | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| Reference Standard | ESA-SCC-5611/008 | |
| JESD-30 Code | O-CRDB-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | Single Dual Emitter | |
| Case Connection | EMITTER | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Collector Current-Max (IC) | 0.035 A | |
| DC Current Gain-Min (hFE) | 50 | |
| Collector-Emitter Voltage-Max | 4.5 V | |
| Highest Frequency Band | X BAND | |
| Collector-Base Capacitance-Max | 0.9 pF |
BFY420(ES) Документы
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