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BGB 719N7ESD E6327 Технические параметры

Infineon  BGB 719N7ESD E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация RF Amplifiers
Марка Infineon
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Supplier Device Package PG-TSNP-7-6
Package Bulk
Mfr Suntsu Electronics, Inc.
Product Status Active
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 7500
Mounting Styles SMD/SMT
NF - Noise Figure 1.2 dB
P1dB - Compression Point - 6 dBm
Part # Aliases BGB719N7ESDE6327XT SP000942784 BGB719N7ESDE6327XT BGB719N7ESDE6327XTMA1
Manufacturer Infineon
Brand Infineon Technologies
OIP3 - Third Order Intercept - 14 dBm
RoHS Details
Operating Temperature -20°C ~ 70°C
Series SXT324
Packaging MouseReel
Size / Dimension 0.126 L x 0.098 W (3.20mm x 2.50mm)
Свойство продукта Значение свойства
Type MHz Crystal
Subcategory Wireless & RF Integrated Circuits
Technology SiGe
Voltage - Supply 3V
Frequency 28.63636 MHz
Frequency Stability ±50ppm
Operating Frequency 10 MHz to 1 GHz
Operating Supply Voltage 1.5 V to 4 V
ESR (Equivalent Series Resistance) 50 Ohms
Test Frequency 100 MHz
Operating Supply Current 2.8 mA
Load Capacitance 11pF
Operating Mode Fundamental
Frequency Tolerance ±50ppm
Current - Supply 2.8mA
Product Type RF Amplifier
Gain 13.5 dB
RF Type FM
Noise Figure 1.2dB
P1dB -6dBm
Product Category RF Amplifier
Height Seated (Max) 0.031 (0.80mm)
Ratings -
Просмотр сходства
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