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BSC084P03NS3E G Технические параметры
Infineon BSC084P03NS3E G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Package / Case | TDSON-8 | |
| Surface Mount | YES | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Voltage, Rating | 150 V | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Typical Turn-On Delay Time | 16.4 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2 V | |
| Pd - Power Dissipation | 69 W | |
| Transistor Polarity | P-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V | |
| Unit Weight | 0.004386 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 5000 | |
| Mounting Styles | SMD/SMT | |
| Forward Transconductance - Min | 33 S | |
| Channel Mode | Enhancement | |
| Part # Aliases | SP000473012 BSC84P3NS3EGXT BSC084P03NS3EGATMA1 | |
| Manufacturer | Infineon | |
| Brand | Infineon Technologies | |
| Qg - Gate Charge | 57.7 nC | |
| Tradename | OptiMOS | |
| Rds On - Drain-Source Resistance | 8.4 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 33.3 nS | |
| Id - Continuous Drain Current | 78.6 A | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BSC084P03NS3EG | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.66 | |
| Drain Current-Max (ID) | 14.9 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | OptiMOS P3 | |
| Packaging | MouseReel | |
| Tolerance | 0.25 % | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Temperature Coefficient | 25 ppm/°C | |
| Resistance | 104 Ω | |
| Max Operating Temperature | 155 °C | |
| Min Operating Temperature | -55 °C | |
| Composition | Thin Film | |
| HTS Code | 8541.29.00.95 | |
| Subcategory | MOSFETs | |
| Power Rating | 250 mW | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-F5 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Rise Time | 133.5 nS | |
| Polarity/Channel Type | P-CHANNEL | |
| Product Type | MOSFET | |
| Transistor Type | 1 P-Channel | |
| Drain Current-Max (Abs) (ID) | 78.6 A | |
| Drain-source On Resistance-Max | 0.0084 Ω | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 105 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 69 W | |
| Product Category | MOSFET | |
| Height | 650 µm | |
| Width | 5.15 mm | |
| Length | 5.9 mm |
BSC084P03NS3E G Документы
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