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BSC100N03LSG Технические параметры

Infineon  BSC100N03LSG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Supplier Device Package PG-TDSON-8
Number of Terminals 5Terminals
Transistor Element Material SILICON
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 13A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Mfr Infineon Technologies
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Product Status Active
Package Description GREEN, PLASTIC, TDSON-8
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) 40
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number BSC100N03LSG
Package Shape RECTANGULAR
Manufacturer Infineon Technologies AG
Number of Elements 1 Element
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Risk Rank 5.69
Drain Current-Max (ID) 13 A
Operating Temperature -55°C ~ 150°C (TJ)
Series OptiMOS™3
JESD-609 Code e3
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Vgs (Max) ±20V
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 44 A
Drain-source On Resistance-Max 0.0142 Ω
Pulsed Drain Current-Max (IDM) 176 A
DS Breakdown Voltage-Min 30 V
Avalanche Energy Rating (Eas) 10 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 30 W
FET Feature -
Просмотр сходства

BSC100N03LSG Документы

  • Datasheets
BSC100N03LSG brand manufacturers: Infineon, Anli stock, BSC100N03LSG reference price.Infineon. BSC100N03LSG parameters, BSC100N03LSG Datasheet PDF and pin diagram description download.You can use the BSC100N03LSG Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BSC100N03LSG pin diagram and circuit diagram and usage method of function,BSC100N03LSG electronics tutorials.You can download from the Anli.