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BSC109N10NS3GXT Технические параметры

Infineon  BSC109N10NS3GXT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Factory Lead Time 26 Weeks
Surface Mount YES
Number of Terminals 5Terminals
Transistor Element Material SILICON
Supplier Package TDSON EP
Mounting Surface Mount
Package Description SMALL OUTLINE, R-PDSO-F5
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number BSC109N10NS3GXT
Package Shape RECTANGULAR
Manufacturer Infineon Technologies AG
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Свойство продукта Значение свойства
Risk Rank 1.75
Drain Current-Max (ID) 63 A
Operating Temperature -55 to 150 °C
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.0109 Ω
Pulsed Drain Current-Max (IDM) 252 A
DS Breakdown Voltage-Min 100 V
Avalanche Energy Rating (Eas) 70 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Просмотр сходства

BSC109N10NS3GXT Документы

  • Datasheets
BSC109N10NS3GXT brand manufacturers: Infineon, Anli stock, BSC109N10NS3GXT reference price.Infineon. BSC109N10NS3GXT parameters, BSC109N10NS3GXT Datasheet PDF and pin diagram description download.You can use the BSC109N10NS3GXT Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BSC109N10NS3GXT pin diagram and circuit diagram and usage method of function,BSC109N10NS3GXT electronics tutorials.You can download from the Anli.