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BSC130P03LS G Технические параметры
Infineon BSC130P03LS G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Factory Lead Time | 1 Week | |
| Surface Mount | YES | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Package | Retail Package | |
| Mfr | Glenair | |
| Product Status | Active | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BSC130P03LSG | |
| Drain Current-Max (ID) | 12 A | |
| Risk Rank | 8.56 | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Life Cycle Code | Obsolete | |
| Number of Elements | 1 Element | |
| Manufacturer | Infineon Technologies AG | |
| Package Shape | RECTANGULAR | |
| Series | * |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Subcategory | Other Transistors | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-F5 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 22.5 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 148 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 69 W |
BSC130P03LS G Документы
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