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BSL214NL6327 Технические параметры
Infineon BSL214NL6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Factory Lead Time | 1 Week | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Surface Mount | YES | |
| Supplier Device Package | PG-TSOP6-6 | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Package | Bulk | |
| Current - Continuous Drain (Id) @ 25℃ | 1.5A | |
| Mfr | Infineon Technologies | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BSL214NL6327 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.81 | |
| Part Package Code | TSOP | |
| Drain Current-Max (ID) | 1.5 A | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | OptiMOS™ |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMAIBLE | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 500mW | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 3.7µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 1.5 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| FET Feature | Logic Level Gate | |
| Feedback Cap-Max (Crss) | 9 pF |
BSL214NL6327 Документы
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