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BSO080P03NS3EGXT Технические параметры

Infineon  BSO080P03NS3EGXT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Contact Plating Tin
Mount Surface Mount
Surface Mount YES
Number of Pins 8Pins
Number of Terminals 8Terminals
Transistor Element Material SILICON
RoHS Compliant
Package Description SMALL OUTLINE, R-PDSO-G8
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Operating Temperature-Max 150 °C
Manufacturer Part Number BSO080P03NS3EGXT
Package Shape RECTANGULAR
Manufacturer Infineon Technologies AG
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Risk Rank 5.62
Свойство продукта Значение свойства
Drain Current-Max (ID) 9.8 A
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code compliant
JESD-30 Code R-PDSO-G8
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rise Time 47 ns
Polarity/Channel Type P-CHANNEL
Continuous Drain Current (ID) 12 A
Gate to Source Voltage (Vgs) 25 V
Drain-source On Resistance-Max 0.008 Ω
Pulsed Drain Current-Max (IDM) 48 A
DS Breakdown Voltage-Min 30 V
Avalanche Energy Rating (Eas) 149 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
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BSO080P03NS3EGXT Документы

  • Datasheets
BSO080P03NS3EGXT brand manufacturers: Infineon, Anli stock, BSO080P03NS3EGXT reference price.Infineon. BSO080P03NS3EGXT parameters, BSO080P03NS3EGXT Datasheet PDF and pin diagram description download.You can use the BSO080P03NS3EGXT Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BSO080P03NS3EGXT pin diagram and circuit diagram and usage method of function,BSO080P03NS3EGXT electronics tutorials.You can download from the Anli.