Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BSO080P03S Технические параметры
Infineon BSO080P03S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Voltage Rating (DC) | -30 V | |
| RoHS | Non-Compliant | |
| Turn Off Delay Time | 130 ns | |
| Package Description | PLASTIC PACKAGE-8 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | BSO080P03S | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.65 | |
| Drain Current-Max (ID) | 12.6 A | |
| Packaging | Tape & Reel | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Subcategory | Other Transistors | |
| Max Power Dissipation | 1.79 W | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Current Rating | -12.6 A | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.79 W | |
| Turn On Delay Time | 15 ns | |
| Transistor Application | SWITCHING | |
| Rise Time | 22 ns | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Polarity/Channel Type | P-CHANNEL | |
| Continuous Drain Current (ID) | 12.6 A | |
| Gate to Source Voltage (Vgs) | 25 V | |
| Drain Current-Max (Abs) (ID) | 12.6 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| Drain to Source Breakdown Voltage | 30 V | |
| Input Capacitance | 5.89 nF | |
| DS Breakdown Voltage-Min | 30 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Rds On Max | 8 mΩ | |
| Feedback Cap-Max (Crss) | 1500 pF | |
| Radiation Hardening | No | |
| Lead Free | Contains Lead |
BSO080P03S Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ