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BSO083N03MSG Технические параметры

Infineon  BSO083N03MSG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Supplier Device Package PG-DSO-8
Number of Terminals 8Terminals
Transistor Element Material SILICON
Continuous Drain Current Id 11
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Mfr Infineon Technologies
Power Dissipation (Max) 1.56W (Ta)
Product Status Active
Package Description SMALL OUTLINE, R-PDSO-G8
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 3
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) 40
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number BSO083N03MSG
Package Shape RECTANGULAR
Manufacturer Infineon Technologies AG
Number of Elements 1 Element
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Risk Rank 5.81
Drain Current-Max (ID) 9.8 A
Operating Temperature -55°C ~ 150°C (TJ)
Series OptiMOS™ 3
Свойство продукта Значение свойства
JESD-609 Code e3
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Vgs (Max) ±20V
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 11 A
Drain-source On Resistance-Max 0.0083 Ω
DS Breakdown Voltage-Min 30 V
Channel Type N
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2.5 W
FET Feature -
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BSO083N03MSG Документы

  • Datasheets
BSO083N03MSG brand manufacturers: Infineon, Anli stock, BSO083N03MSG reference price.Infineon. BSO083N03MSG parameters, BSO083N03MSG Datasheet PDF and pin diagram description download.You can use the BSO083N03MSG Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BSO083N03MSG pin diagram and circuit diagram and usage method of function,BSO083N03MSG electronics tutorials.You can download from the Anli.