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BSP123L6327 Технические параметры
Infineon BSP123L6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 4Pins | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Voltage Rating (DC) | 100 V | |
| RoHS | Compliant | |
| Turn Off Delay Time | 8.7 ns | |
| Package Description | GREEN, PLASTIC PACKAGE-4 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BSP123L6327 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.13 | |
| Drain Current-Max (ID) | 0.37 A | |
| Packaging | Cut Tape | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| HTS Code | 8541.29.00.75 | |
| Subcategory | FET General Purpose Power |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 1.79 W | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| Current Rating | 370 mA | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.79 W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 3.3 ns | |
| Rise Time | 3.2 ns | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 370 mA | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 0.37 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| Drain to Source Breakdown Voltage | 100 V | |
| Pulsed Drain Current-Max (IDM) | 1.48 A | |
| Input Capacitance | 70 pF | |
| DS Breakdown Voltage-Min | 100 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1.79 W | |
| Drain to Source Resistance | 6 Ω | |
| Rds On Max | 6 Ω | |
| Nominal Vgs | 1.4 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |
BSP123L6327 Документы
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