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BSP123L6327XT Технические параметры
Infineon BSP123L6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 150 °C | |
| Manufacturer Part Number | BSP123L6327XT | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.74 | |
| Drain Current-Max (ID) | 0.37 A | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G4 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 6 Ω | |
| Pulsed Drain Current-Max (IDM) | 1.48 A | |
| DS Breakdown Voltage-Min | 100 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
BSP123L6327XT Документы
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