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BSP125L6327 Технические параметры

Infineon  BSP125L6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Supplier Device Package PG-SOT223-4-21
Number of Terminals 4Terminals
Transistor Element Material SILICON
Continuous Drain Current Id 120
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Mfr Infineon Technologies
Power Dissipation (Max) 1.8W (Ta)
Product Status Active
Package Description GREEN, PLASTIC PACKAGE-4
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) 40
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number BSP125L6327
Package Shape RECTANGULAR
Manufacturer Infineon Technologies AG
Number of Elements 1 Element
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Risk Rank 5.6
Drain Current-Max (ID) 0.12 A
Operating Temperature -55°C ~ 150°C (TJ)
Series SIPMOS®
JESD-609 Code e3
Pbfree Code Yes
Свойство продукта Значение свойства
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 94µA
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±20V
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 0.12 A
Drain-source On Resistance-Max 45 Ω
Pulsed Drain Current-Max (IDM) 0.48 A
DS Breakdown Voltage-Min 600 V
Channel Type N
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1.8 W
FET Feature -
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BSP125L6327 Документы

  • Datasheets
BSP125L6327 brand manufacturers: Infineon, Anli stock, BSP125L6327 reference price.Infineon. BSP125L6327 parameters, BSP125L6327 Datasheet PDF and pin diagram description download.You can use the BSP125L6327 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BSP125L6327 pin diagram and circuit diagram and usage method of function,BSP125L6327 electronics tutorials.You can download from the Anli.