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BSP317PL6327 Технические параметры
Infineon BSP317PL6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Factory Lead Time | 1 Week | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Surface Mount | YES | |
| Number of Pins | 4Pins | |
| Supplier Device Package | PG-SOT223-4-21 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Voltage Rating (DC) | -250 V | |
| RoHS | Compliant | |
| Turn Off Delay Time | 254 ns | |
| Package | Bulk | |
| Base Product Number | BSP317 | |
| Current - Continuous Drain (Id) @ 25℃ | 430mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Mfr | Infineon Technologies | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BSP317PL6327 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 8.47 | |
| Drain Current-Max (ID) | 0.43 A | |
| Packaging | Cut Tape | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | SIPMOS® | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.29.00.75 | |
| Subcategory | Other Transistors | |
| Max Power Dissipation | 1.8 W | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Current Rating | -430 mA | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.8 W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 5.7 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 430mA, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 370µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 262 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 10 V | |
| Rise Time | 11.1 ns | |
| Drain to Source Voltage (Vdss) | 250 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | P-CHANNEL | |
| Continuous Drain Current (ID) | 430 mA | |
| Threshold Voltage | -1.5 V | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 0.43 A | |
| Drain-source On Resistance-Max | 4 Ω | |
| Drain to Source Breakdown Voltage | 250 V | |
| Pulsed Drain Current-Max (IDM) | 1.72 A | |
| Dual Supply Voltage | -60 V | |
| Input Capacitance | 262 pF | |
| DS Breakdown Voltage-Min | 250 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| FET Feature | - | |
| Drain to Source Resistance | 4 Ω | |
| Rds On Max | 4 Ω | |
| Nominal Vgs | -1.5 V | |
| Width | 6.7 mm | |
| REACH SVHC | No SVHC | |
| Lead Free | Lead Free |
BSP317PL6327 Документы
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