Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BSP321PL6327 Технические параметры
Infineon BSP321PL6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Factory Lead Time | 1 Week | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Surface Mount | YES | |
| Number of Pins | 4Pins | |
| Supplier Device Package | PG-SOT223-4-21 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| RoHS | Compliant | |
| Turn Off Delay Time | 16.5 ns | |
| Package | Bulk | |
| Current - Continuous Drain (Id) @ 25℃ | 980mA (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Mfr | Infineon Technologies | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BSP321PL6327 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.69 | |
| Drain Current-Max (ID) | 0.98 A | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | SIPMOS® | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | AVALANCHE RATED | |
| Subcategory | Other Transistors | |
| Max Power Dissipation | 1.8 W | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.8 W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 5.9 ns | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 980mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 380µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 319 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
| Rise Time | 4.4 ns | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | P-CHANNEL | |
| Continuous Drain Current (ID) | 980 mA | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 0.98 A | |
| Drain-source On Resistance-Max | 0.9 Ω | |
| Drain to Source Breakdown Voltage | 100 V | |
| Pulsed Drain Current-Max (IDM) | 3.9 A | |
| Input Capacitance | 319 pF | |
| DS Breakdown Voltage-Min | 100 V | |
| Avalanche Energy Rating (Eas) | 57 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| FET Feature | - | |
| Drain to Source Resistance | 900 mΩ | |
| Rds On Max | 900 mΩ | |
| Nominal Vgs | -3 V | |
| Radiation Hardening | No |
BSP321PL6327 Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ