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BSP322PL6327 Технические параметры

Infineon  BSP322PL6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Supplier Device Package PG-SOT223-4-21
Number of Terminals 4Terminals
Transistor Element Material SILICON
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Mfr Infineon Technologies
Power Dissipation (Max) 1.8W (Ta)
Product Status Active
Package Description SMALL OUTLINE, R-PDSO-G4
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) 40
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number BSP322PL6327
Package Shape RECTANGULAR
Manufacturer Infineon Technologies AG
Number of Elements 1 Element
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Risk Rank 5.7
Drain Current-Max (ID) 1 A
Operating Temperature -55°C ~ 150°C (TJ)
Series SIPMOS®
JESD-609 Code e3
Свойство продукта Значение свойства
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 800mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 1V @ 380µA
Input Capacitance (Ciss) (Max) @ Vds 372 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Vgs (Max) ±20V
Polarity/Channel Type P-CHANNEL
Drain Current-Max (Abs) (ID) 1 A
Drain-source On Resistance-Max 0.8 Ω
Pulsed Drain Current-Max (IDM) 4 A
DS Breakdown Voltage-Min 100 V
Avalanche Energy Rating (Eas) 57 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1.8 W
FET Feature -
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BSP322PL6327 Документы

  • Datasheets
BSP322PL6327 brand manufacturers: Infineon, Anli stock, BSP322PL6327 reference price.Infineon. BSP322PL6327 parameters, BSP322PL6327 Datasheet PDF and pin diagram description download.You can use the BSP322PL6327 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BSP322PL6327 pin diagram and circuit diagram and usage method of function,BSP322PL6327 electronics tutorials.You can download from the Anli.