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BSS159NH6327XT Технические параметры

Infineon  BSS159NH6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Package / Case SOT-23-3
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-On Delay Time 3.1 ns
Vgs th - Gate-Source Threshold Voltage 3.5 V
Qualification AEC-Q101
Pd - Power Dissipation 360 mW
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.000282 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 6000
Mounting Styles SMD/SMT
Forward Transconductance - Min 100 mS
Channel Mode Depletion
Part # Aliases SP000919328 H6327 BSS159N BSS159NH6327XTSA2
Manufacturer Infineon
Свойство продукта Значение свойства
Brand Infineon Technologies
Qg - Gate Charge 1.4 nC
Rds On - Drain-Source Resistance 1.7 Ohms
RoHS Details
Typical Turn-Off Delay Time 9 ns
Id - Continuous Drain Current 230 mA
Packaging MouseReel
Subcategory MOSFETs
Technology Si
Configuration Single
Number of Channels 1 ChannelChannel
Rise Time 2.9 ns
Product Type MOSFET
Transistor Type 1 N-Channel
Product MOSFET Small Signal
Product Category MOSFET
Width 1.3 mm
Height 1.1 mm
Length 2.9 mm
Просмотр сходства

BSS159NH6327XT Документы

  • Datasheets
BSS159NH6327XT brand manufacturers: Infineon, Anli stock, BSS159NH6327XT reference price.Infineon. BSS159NH6327XT parameters, BSS159NH6327XT Datasheet PDF and pin diagram description download.You can use the BSS159NH6327XT Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BSS159NH6327XT pin diagram and circuit diagram and usage method of function,BSS159NH6327XT electronics tutorials.You can download from the Anli.