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Infineon BSZ900N15NS3GXT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Factory Lead Time | 26 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Continuous Drain Current Id | 13 | |
| RoHS | Compliant | |
| Turn Off Delay Time | 8 ns | |
| Package Description | SMALL OUTLINE, S-PDSO-N5 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -55 °C | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BSZ900N15NS3GXT | |
| Package Shape | SQUARE | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.76 | |
| Drain Current-Max (ID) | 13 A | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | S-PDSO-N5 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 38 W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 4 ns | |
| Transistor Application | SWITCHING | |
| Rise Time | 4 ns | |
| Drain to Source Voltage (Vdss) | 150 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 13 A | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| Drain to Source Breakdown Voltage | 150 V | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| DS Breakdown Voltage-Min | 150 V | |
| Channel Type | N | |
| Avalanche Energy Rating (Eas) | 30 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 38 W | |
| Max Junction Temperature (Tj) | 150 °C | |
| Drain to Source Resistance | 74 mΩ | |
| Height | 1 mm |