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BTS115A Технические параметры
Infineon BTS115A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Mount | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Voltage Rating (DC) | 50 V | |
| RoHS | Compliant | |
| Turn Off Delay Time | 70 ns | |
| Product Status | Obsolete | |
| Mfr | Infineon Technologies | |
| Current - Continuous Drain (Id) @ 25℃ | 15.5A (Tc) | |
| Package | Bulk | |
| Package Description | TO-220AB, 3 PIN | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Drain Current-Max (ID) | 15.5 A | |
| Part Package Code | TO-220AB | |
| Risk Rank | 5.31 | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Life Cycle Code | Active | |
| Number of Elements | 1 Element | |
| Manufacturer | Rochester Electronics LLC | |
| Package Shape | RECTANGULAR | |
| Manufacturer Part Number | BTS115A | |
| Series | Alliance Plastics, BTS | |
| Terminal Finish | MATTE TIN | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Max Power Dissipation | 50 W | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Current Rating | 15.5 A | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 50 W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 15 ns | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 50 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 15.5 A | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 10 V | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| Drain to Source Breakdown Voltage | 50 V | |
| Pulsed Drain Current-Max (IDM) | 62 A | |
| Input Capacitance | 735 pF | |
| DS Breakdown Voltage-Min | 50 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Drain to Source Resistance | 120 mΩ | |
| Rds On Max | 120 mΩ | |
| Length | 15.4 mm |
BTS115A Документы
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