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BUZ31H Технические параметры
Infineon BUZ31H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| Turn Off Delay Time | 150 ns | |
| Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BUZ31H | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.66 | |
| Part Package Code | TO-220AB | |
| Drain Current-Max (ID) | 14.5 A | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Additional Feature | AVALANCHE RATED | |
| Subcategory | FET General Purpose Power | |
| Max Power Dissipation | 95 W | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 95 W | |
| Turn On Delay Time | 12 ns | |
| Halogen Free | Halogen Free | |
| Rise Time | 50 ns | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 14.5 A | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 14.5 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| Drain to Source Breakdown Voltage | 200 V | |
| Pulsed Drain Current-Max (IDM) | 58 A | |
| Input Capacitance | 1.12 nF | |
| DS Breakdown Voltage-Min | 200 V | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 95 W | |
| Drain to Source Resistance | 200 mΩ | |
| Rds On Max | 200 mΩ | |
| Width | 4.57 mm | |
| Height | 9.45 mm | |
| Length | 10.36 mm | |
| Radiation Hardening | No |
BUZ31H Документы
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