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CY7C1312CV18-250BZXC Технические параметры
Infineon CY7C1312CV18-250BZXC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | Infineon | |
| Mounting Type | Surface Mount | |
| Package / Case | 165-LBGA | |
| Surface Mount | YES | |
| Supplier Device Package | 165-FBGA (13x15) | |
| Number of Terminals | 165Terminals | |
| Material housing | Plastic | |
| Degree of protection (IP) | IP30 | |
| Package | Tray | |
| Base Product Number | CY7C1312 | |
| Mfr | Infineon Technologies | |
| Product Status | Obsolete | |
| Memory Types | Volatile | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Package Code | LBGA | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Risk Rank | 5.55 | |
| Part Package Code | BGA | |
| Number of Words | 1048576 wordsWord | |
| Manufacturer Part Number | CY7C1312CV18-250BZXC | |
| Rohs Code | Yes | |
| Operating Temperature-Max | 70 °C | |
| Access Time-Max | 0.45 ns | |
| Reflow Temperature-Max (s) | 40 | |
| Package Body Material | PLASTIC/EPOXY | |
| Number of Words Code | 1000000Words Codes | |
| Moisture Sensitivity Levels | 3 | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Package Description | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | |
| Operating Temperature | 0°C ~ 70°C (TA) | |
| Series | - | |
| JESD-609 Code | e1 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | Yes | |
| Terminal Finish | TIN SILVER COPPER | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Technology | SRAM - Synchronous, QDR II | |
| Voltage - Supply | 1.7V ~ 1.9V | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Number of Functions | 1Function | |
| Terminal Pitch | 1 mm | |
| Depth | 89 | |
| Reach Compliance Code | unknown | |
| Pin Count | 165 | |
| JESD-30 Code | R-PBGA-B165 | |
| Qualification Status | COMMERCIAL | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Temperature Grade | COMMERCIAL | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Memory Size | 18Mbit | |
| Operating Mode | SYNCHRONOUS | |
| Clock Frequency | 250 MHz | |
| Protections | Miniature- / earth leakage circuit breaker | |
| Memory Format | SRAM | |
| Memory Interface | Parallel | |
| Organization | 1MX18 | |
| Seated Height-Max | 1.4 mm | |
| Memory Width | 18 | |
| Write Cycle Time - Word, Page | - | |
| Memory Density | 18874368 bit | |
| Parallel/Serial | PARALLEL | |
| Memory IC Type | QDR SRAM | |
| Memory Organization | 1M x 18 | |
| Width | 221 | |
| Height | 475 | |
| Length | 15 mm |
CY7C1312CV18-250BZXC Документы
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