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CY7C1321KV18-250BZC Технические параметры

Infineon  CY7C1321KV18-250BZC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка Infineon
Mounting Type Surface
Package / Case 165-LBGA
Supplier Device Package 165-FBGA (13x15)
Manufacturer Part Number TSDR4160MA150S-SSAC
Approvals CE, CSA, UL
Manufacturer SSAC
Timing Range 60
Maximum Clock Rate 250 MHz
Supplier Package FBGA
Data Rate Architecture DDR
Typical Operating Supply Voltage 1.8000 V
Minimum Operating Supply Voltage 1.7 V
Timing Type Synchronous
Number of Words 512 kWordsWord
Number of I/O Lines 36 BitI/O Line
Maximum Operating Supply Voltage 1.9 V
Mounting Surface Mount
Package Tray
Base Product Number CY7C1321
Mfr Infineon Technologies
Product Status Active
Memory Types Volatile
Moisture Sensitive Yes
Maximum Clock Frequency 250 MHz
Maximum Operating Temperature + 70 C
Supply Voltage-Max 1.9 V
Minimum Operating Temperature 0 C
Factory Pack QuantityFactory Pack Quantity 680
Supply Voltage-Min 1.7 V
Mounting Styles SMD/SMT
Свойство продукта Значение свойства
Interface Type Parallel
Brand Infineon Technologies
RoHS N
Usage Level Commercial grade
Operating Temperature 0 to 70 °C
Series -
Packaging Tray
Termination 0.250 in Flat Blade
Type Synchronous
Subcategory Memory & Data Storage
Technology SRAM - Synchronous, DDR II
Voltage - Supply 1.7V ~ 1.9V
Pin Count 165
Memory Size 18Mbit
Number of Ports 1Port
Clock Frequency 250 MHz
Supply Current-Max 370 mA
Access Time 450 ps
Memory Format SRAM
Memory Interface Parallel
Architecture Pipelined
Organization 512 k x 36
Write Cycle Time - Word, Page -
Address Bus Width 19 Bit
Product Type SRAM
Density 18 Mb
Coil Voltage 120 VAC
Screening Level Commercial
Mode of Operation Repeat Cycle
Product Category SRAM
Memory Organization 512K x 36

CY7C1321KV18-250BZC Документы

  • Datasheets
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