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- FS200R07N3E4R_B11
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FS200R07N3E4R_B11 Технические параметры
Infineon FS200R07N3E4R_B11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | Infineon | |
| Mount | Screw | |
| Package / Case | Module | |
| Number of Pins | 35Pins | |
| Number of Elements | 6 Elements | |
| Pbfree Code | no | |
| Number of Terminations | 35Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -40°C | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 35 | |
| Configuration | COMPLEX | |
| Transistor Application | POWER CONTROL | |
| Halogen Free | Not Halogen Free | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 650V | |
| Max Collector Current | 200A | |
| Power Dissipation-Max (Abs) | 600W | |
| Turn On Time | 210 ns | |
| Turn Off Time-Nom (toff) | 450 ns | |
| Gate-Emitter Voltage-Max | 20V | |
| VCEsat-Max | 1.95 V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Contains Lead |
FS200R07N3E4R_B11 Документы
- ConflictMineralStatementInfineon-company-51.pdf
- Datasheets
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