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IDV03S60C Технические параметры
Infineon IDV03S60C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | Infineon | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 Full Pack | |
| Number of Pins | 2Pins | |
| Supplier Device Package | PG-TO220-2-22 | |
| RoHS | Compliant | |
| Package | Bulk | |
| Mfr | Infineon Technologies | |
| Product Status | Active | |
| Series | thinQ!™ | |
| Max Operating Temperature | 175 °C | |
| Min Operating Temperature | -55 °C | |
| Element Configuration | Single | |
| Speed | No Recovery Time > 500mA (Io) | |
| Diode Type | Silicon Carbide Schottky | |
| Current - Reverse Leakage @ Vr | 30 µA @ 600 V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 3 A | |
| Forward Current | 3 A | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Current - Average Rectified (Io) | 3A (DC) | |
| Forward Voltage | 1.9 V | |
| Max Reverse Voltage (DC) | 600 V | |
| Average Rectified Current | 3 A | |
| Reverse Recovery Time | 0 s | |
| Peak Reverse Current | 30 µA | |
| Max Repetitive Reverse Voltage (Vrrm) | 600 V | |
| Capacitance @ Vr, F | 90pF @ 1V, 1MHz | |
| Peak Non-Repetitive Surge Current | 16 A | |
| Max Forward Surge Current (Ifsm) | 16 A | |
| Reverse Recovery Time (trr) | 0 ns | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No |
IDV03S60C Документы
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