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IGB50N60TXT Технические параметры
Infineon IGB50N60TXT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | Infineon | |
| Factory Lead Time | 20 Weeks | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-on Time-Nom (ton) | 60 ns | |
| Turn-off Time-Nom (toff) | 396 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IGB50N60TXT | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.73 | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PSSO-G2 | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-263AB | |
| Collector Current-Max (IC) | 100 A | |
| Continuous Collector Current | 100 | |
| Collector-Emitter Voltage-Max | 600 V |
IGB50N60TXT Документы
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