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IHW20N135R3 Технические параметры
Infineon IHW20N135R3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | Infineon | |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) | |
| Package / Case | TO-247-3 | |
| Contact Plating | Tin | |
| Mounting Type | Through Hole | |
| Number of Pins | 3Pins | |
| Supplier Device Package | PG-TO247-3-41 | |
| Package Quantity | 240 | |
| Package | Tape & Reel (TR) | |
| Mfr | KYOCERA AVX | |
| Product Status | Active | |
| Operating Temperature (Max.) | 175C | |
| Operating Temperature Classification | Automotive | |
| Package Type | TO-247 | |
| Collector Current (DC) | 40(A) | |
| Rad Hardened | No | |
| Operating Temperature (Min.) | -40C | |
| Gate to Emitter Voltage (Max) | ±20(V) | |
| Mounting | Through Hole | |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | |
| Pd - Power Dissipation | 310 W | |
| Maximum Operating Temperature | + 175 C | |
| Unit Weight | 0.211644 oz | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 240 | |
| Mounting Styles | Through Hole | |
| Part # Aliases | IHW2N135R3XK SP000909532 IHW20N135R3FKSA1 | |
| Manufacturer | Infineon | |
| Brand | Infineon Technologies | |
| Tradename | TRENCHSTOP | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 1.35 kV |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Schedule B | 8541290080 | |
| Collector-Emitter Breakdown Voltage | 1.35 kV | |
| Current-Collector (Ic) (Max) | 40 A | |
| Test Conditions | 600V, 20A, 15Ohm, 15V | |
| Series | * | |
| Packaging | Rail/Tube | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Max Operating Temperature | 175 °C | |
| Min Operating Temperature | -40 °C | |
| Subcategory | IGBTs | |
| Max Power Dissipation | 310 W | |
| Technology | Si | |
| Pin Count | 3 +Tab | |
| Configuration | Single | |
| Element Configuration | Single | |
| Power Dissipation | 310 | |
| Input Type | Standard | |
| Power - Max | 310 W | |
| Halogen Free | Halogen Free | |
| Product Type | IGBT Transistors | |
| Collector Emitter Voltage (VCEO) | 1.8 V | |
| Max Collector Current | 40 A | |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V | |
| Channel Type | N | |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 20A | |
| Continuous Collector Current | 40 | |
| IGBT Type | Trench Field Stop | |
| Gate Charge | 195 nC | |
| Current - Collector Pulsed (Icm) | 60 A | |
| Td (on/off) @ 25°C | -/335ns | |
| Switching Energy | -, 1.3mJ (off) | |
| Product Category | IGBT Transistors |
IHW20N135R3 Документы
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