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Infineon IKW75N60H3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | Infineon | |
| Factory Lead Time | 1 Week | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Surface Mount | NO | |
| Supplier Device Package | PG-TO247-3-41 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package | Bulk | |
| Current-Collector (Ic) (Max) | 80 A | |
| Mfr | Infineon Technologies | |
| Product Status | Active | |
| Test Conditions | 400V, 75A, 5.2Ohm, 15V | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IKW75N60H3 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 1.61 | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Series | TRENCHSTOP™ |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Subcategory | Insulated Gate BIP Transistors | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 428 W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-247 | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Power Dissipation-Max (Abs) | 428 W | |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 75A | |
| Collector Current-Max (IC) | 80 A | |
| IGBT Type | Trench Field Stop | |
| Collector-Emitter Voltage-Max | 600 V | |
| Gate Charge | 470 nC | |
| Current - Collector Pulsed (Icm) | 225 A | |
| Td (on/off) @ 25°C | 31ns/265ns | |
| Switching Energy | 3mJ (on), 1.7mJ (off) | |
| Gate-Emitter Voltage-Max | 20 V | |
| Gate-Emitter Thr Voltage-Max | 5.7 V | |
| Reverse Recovery Time (trr) | 190 ns |