Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IPB041N04NG Технические параметры
Infineon IPB041N04NG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IPB041N04NG | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.83 | |
| Part Package Code | D2PAK | |
| Drain Current-Max (ID) | 80 A | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | MATTE TIN | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-263AB | |
| Drain Current-Max (Abs) (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0041 Ω | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| DS Breakdown Voltage-Min | 40 V | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 94 W |
IPB041N04NG Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ