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IPB042N10N3GXT Технические параметры

Infineon  IPB042N10N3GXT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Factory Lead Time 18 Weeks
Surface Mount YES
Number of Terminals 2Terminals
Transistor Element Material SILICON
Continuous Drain Current Id 100
Package Description SMALL OUTLINE, R-PSSO-G2
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 175 °C
Rohs Code Yes
Manufacturer Part Number IPB042N10N3GXT
Package Shape RECTANGULAR
Manufacturer Infineon Technologies AG
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Risk Rank 5.69
Свойство продукта Значение свойства
Drain Current-Max (ID) 100 A
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263AB
Drain-source On Resistance-Max 0.0042 Ω
Pulsed Drain Current-Max (IDM) 400 A
DS Breakdown Voltage-Min 100 V
Channel Type N
Avalanche Energy Rating (Eas) 340 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Просмотр сходства
IPB042N10N3GXT brand manufacturers: Infineon, Anli stock, IPB042N10N3GXT reference price.Infineon. IPB042N10N3GXT parameters, IPB042N10N3GXT Datasheet PDF and pin diagram description download.You can use the IPB042N10N3GXT Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPB042N10N3GXT pin diagram and circuit diagram and usage method of function,IPB042N10N3GXT electronics tutorials.You can download from the Anli.