Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IPB070N06NG Технические параметры
Infineon IPB070N06NG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Drain Current-Max (ID) | 80 A | |
| Part Package Code | D2PAK | |
| Risk Rank | 5.71 | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Life Cycle Code | Obsolete | |
| Number of Elements | 1 Element | |
| Manufacturer | Infineon Technologies AG | |
| Package Shape | RECTANGULAR | |
| Manufacturer Part Number | IPB070N06NG | |
| Rohs Code | Yes | |
| Operating Temperature-Max | 175 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | AVALANCHE RATED | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-263AB | |
| Drain Current-Max (Abs) (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0067 Ω | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| DS Breakdown Voltage-Min | 60 V | |
| Avalanche Energy Rating (Eas) | 530 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 250 W |
IPB070N06NG Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ