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IPB093N04LG Технические параметры

Infineon  IPB093N04LG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Supplier Device Package PG-TO-263-3-2
Continuous Drain Current Id 50
RoHS Compliant
Turn Off Delay Time 19 ns
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Mfr Infineon Technologies
Power Dissipation (Max) 47W (Tc)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Series OptiMOS™ 3
Max Operating Temperature 175 °C
Min Operating Temperature -55 °C
Max Power Dissipation 36 W
Technology MOSFET (Metal Oxide)
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 47 W
Turn On Delay Time 4.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 77µA
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Rise Time 2.8 ns
Drain to Source Voltage (Vdss) 60 V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50 A
Gate to Source Voltage (Vgs) 20 V
Drain to Source Breakdown Voltage 40 V
Input Capacitance 1.6 nF
Channel Type N
FET Feature -
Drain to Source Resistance 9.3 mΩ
Rds On Max 23 mΩ
REACH SVHC No SVHC
Radiation Hardening No
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IPB093N04LG Документы

  • Datasheets
IPB093N04LG brand manufacturers: Infineon, Anli stock, IPB093N04LG reference price.Infineon. IPB093N04LG parameters, IPB093N04LG Datasheet PDF and pin diagram description download.You can use the IPB093N04LG Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPB093N04LG pin diagram and circuit diagram and usage method of function,IPB093N04LG electronics tutorials.You can download from the Anli.