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IPB096N03LG Технические параметры
Infineon IPB096N03LG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Surface Mount | YES | |
| Supplier Device Package | PG-TO263-3 | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Package | Bulk | |
| Current - Continuous Drain (Id) @ 25℃ | 35A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Mfr | Infineon Technologies | |
| Power Dissipation (Max) | 42W (Tc) | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IPB096N03LG | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.82 | |
| Part Package Code | D2PAK | |
| Drain Current-Max (ID) | 35 A | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Series | OptiMOS™3 | |
| Pbfree Code | Yes |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Subcategory | FET General Purpose Power | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-263AB | |
| Drain Current-Max (Abs) (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.0141 Ω | |
| Pulsed Drain Current-Max (IDM) | 245 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 42 W | |
| FET Feature | - |
IPB096N03LG Документы
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