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IPB26CN10N Технические параметры

Infineon  IPB26CN10N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Mfr Infineon Technologies
Power Dissipation (Max) 71W (Tc)
Product Status Active
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 175°C (TJ)
Series CoolMOS™
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 39µA
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Vgs (Max) ±20V
FET Feature -
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IPB26CN10N Документы

  • Datasheets
IPB26CN10N brand manufacturers: Infineon, Anli stock, IPB26CN10N reference price.Infineon. IPB26CN10N parameters, IPB26CN10N Datasheet PDF and pin diagram description download.You can use the IPB26CN10N Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPB26CN10N pin diagram and circuit diagram and usage method of function,IPB26CN10N electronics tutorials.You can download from the Anli.