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IPB45N04S4L-08 Технические параметры

Infineon  IPB45N04S4L-08 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Supplier Device Package PG-TO263-3-2
RoHS Compliant
Turn Off Delay Time 11 ns
Package Bulk
Current - Continuous Drain (Id) @ 25℃ 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Mfr Infineon Technologies
Power Dissipation (Max) 45W (Tc)
Product Status Active
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Series OptiMOS™T2
Max Operating Temperature 175 °C
Min Operating Temperature -55 °C
Max Power Dissipation 45 W
Technology MOSFET (Metal Oxide)
Element Configuration Single
Свойство продукта Значение свойства
Power Dissipation 45 W
Turn On Delay Time 4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.9mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 2.2V @ 17µA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Rise Time 8 ns
Drain to Source Voltage (Vdss) 40 V
Vgs (Max) +20V, -16V
Continuous Drain Current (ID) 45 A
Gate to Source Voltage (Vgs) 20 V
Max Dual Supply Voltage 40 V
Drain to Source Breakdown Voltage 40 V
Input Capacitance 2.34 nF
FET Feature -
Drain to Source Resistance 7.6 mΩ
Rds On Max 7.6 mΩ
Width 9.25 mm
Height 4.4 mm
Length 10 mm
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IPB45N04S4L-08 Документы

  • Datasheets
IPB45N04S4L-08 brand manufacturers: Infineon, Anli stock, IPB45N04S4L-08 reference price.Infineon. IPB45N04S4L-08 parameters, IPB45N04S4L-08 Datasheet PDF and pin diagram description download.You can use the IPB45N04S4L-08 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPB45N04S4L-08 pin diagram and circuit diagram and usage method of function,IPB45N04S4L-08 electronics tutorials.You can download from the Anli.