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IPD130N10NF2SATMA1 Технические параметры

Infineon  IPD130N10NF2SATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Infineon
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Package Tube
Current - Continuous Drain (Id) @ 25℃ 11A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Mfr Infineon Technologies
Power Dissipation (Max) 3W (Ta), 71W (Tc)
Product Status Active
Factory Pack QuantityFactory Pack Quantity 2000
Manufacturer Infineon
Brand Infineon Technologies
RoHS Details
Vds - Drain-Source Breakdown Voltage 100 V
Vgs th - Gate-Source Threshold Voltage 2.2 V
Pd - Power Dissipation 71 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Свойство продукта Значение свойства
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Channel Mode Enhancement
Qg - Gate Charge 18.6 nC
Rds On - Drain-Source Resistance 13 mOhms
Id - Continuous Drain Current 52 A
Operating Temperature -55°C ~ 175°C (TJ)
Series StrongIRFET™ 2
Packaging Cut Tape
Technology MOSFET (Metal Oxide)
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.8V @ 30µA
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Vgs (Max) ±20V
FET Feature -
Product Category Infineon
Просмотр сходства
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