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IPD250N06N3G Технические параметры
Infineon IPD250N06N3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| Turn Off Delay Time | 13 ns | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IPD250N06N3G | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.82 | |
| Part Package Code | TO-252AA | |
| Drain Current-Max (ID) | 28 A | |
| Packaging | Tape & Reel | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Max Operating Temperature | 175 °C | |
| Min Operating Temperature | -55 °C | |
| Subcategory | FET General Purpose Power | |
| Max Power Dissipation | 45 W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 36 W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 12 ns | |
| Transistor Application | SWITCHING | |
| Rise Time | 3 ns | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 28 A | |
| JEDEC-95 Code | TO-252AA | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| Drain to Source Breakdown Voltage | 60 V | |
| Pulsed Drain Current-Max (IDM) | 112 A | |
| Input Capacitance | 2.4 nF | |
| DS Breakdown Voltage-Min | 60 V | |
| Avalanche Energy Rating (Eas) | 13 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 36 W | |
| Drain to Source Resistance | 25 mΩ | |
| Rds On Max | 5.7 mΩ | |
| Radiation Hardening | No |
IPD250N06N3G Документы
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