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IPI100N04S3-03 Технические параметры
Infineon IPI100N04S3-03 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Factory Lead Time | 1 Week | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Continuous Drain Current Id | 100 | |
| Package | Bulk | |
| Mfr | Infineon Technologies | |
| Product Status | Active | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Package Style | IN-LINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IPI100N04S3-03 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.71 | |
| Part Package Code | TO-262AA | |
| Drain Current-Max (ID) | 100 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | * | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| HTS Code | 8541.29.00.95 | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-262AA | |
| Drain Current-Max (Abs) (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| DS Breakdown Voltage-Min | 40 V | |
| Channel Type | N | |
| Avalanche Energy Rating (Eas) | 898 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 214 W |
IPI100N04S3-03 Документы
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