Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IPI100N10S3-05 Технические параметры
Infineon IPI100N10S3-05 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Infineon | |
| Package / Case | TO-262-3 | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Typical Turn-On Delay Time | 34 ns | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Qualification | AEC-Q101 | |
| Pd - Power Dissipation | 300 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 175 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Unit Weight | 0.084199 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 500 | |
| Mounting Styles | Through Hole | |
| Channel Mode | Enhancement | |
| Part # Aliases | IPI1N1S35XK SP000407128 IPI100N10S305AKSA1 | |
| Manufacturer | Infineon | |
| Brand | Infineon Technologies | |
| Qg - Gate Charge | 135 nC | |
| Tradename | OptiMOS | |
| Rds On - Drain-Source Resistance | 4.8 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 60 ns | |
| Id - Continuous Drain Current | 100 A | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Package Style | IN-LINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IPI100N10S3-05 | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 7.98 | |
| Part Package Code | TO-262AA | |
| Drain Current-Max (ID) | 100 A | |
| Series | OptiMOS-T | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Operating Mode | ENHANCEMENT MODE | |
| Rise Time | 17 ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| JEDEC-95 Code | TO-262AA | |
| Drain Current-Max (Abs) (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0051 Ω | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| DS Breakdown Voltage-Min | 100 V | |
| Avalanche Energy Rating (Eas) | 1445 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 300 W | |
| Product Category | MOSFET | |
| Width | 4.5 mm | |
| Height | 9.45 mm | |
| Length | 10.2 mm |
IPI100N10S3-05 Документы
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ